Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-08-15
著者
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Honda Yoshio
Department Of Electronics School Of Engineering Nagoya University Chikusa-ku Nagoya
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KAWAGUCHI Yasutoshi
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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YAMAGUCHI Masahito
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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SAWAKI Nobuhiko
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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MATSUSHIMA Hidetada
Department of Electronics, School of Engineering, Nagoya University
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Matsushima Hidetada
Department Of Electronics School Of Engineering Nagoya University
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Honda Yoshio
Department Of Electronics Nagoya University
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Honda Y
Hitachi Ltd. Kokubunji‐shi Jpn
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Yamaguchi M
Toyota Technological Inst. Nagoya Jpn
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Sawaki N
Nagoya Univ. Nagoya Jpn
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Yamaguchi Masahito
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hiramatsu Kazumasa
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu K
Ntt Corp. Tsukuba‐shi Jpn
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Matsushima Hidetaka
Department of Electronics, School of Engineering, Nagoya University
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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SAWAKI Nobuhiko
Department of Electronics, Nagoya University
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Honda Yoshio
Department of Chemistry, Faculty of Science, Kanazawa University
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- 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長(窒化物及び混晶半導体デバイス)
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)