Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-08-15

著者

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• Honda Yoshio

  Department Of Electronics School Of Engineering Nagoya University Chikusa-ku Nagoya

• KAWAGUCHI Yasutoshi

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• YAMAGUCHI Masahito

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• SAWAKI Nobuhiko

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• MATSUSHIMA Hidetada

  Department of Electronics, School of Engineering, Nagoya University

• Matsushima Hidetada

  Department Of Electronics School Of Engineering Nagoya University

• Honda Yoshio

  Department Of Electronics Nagoya University

• Honda Y

  Hitachi Ltd. Kokubunji‐shi Jpn

• Yamaguchi M

  Toyota Technological Inst. Nagoya Jpn

• Sawaki N

  Nagoya Univ. Nagoya Jpn

• Sawaki Nobuhiko

  Department Of Electronics Faculty Of Engineering Nagoya University

• Yamaguchi Masahito

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hiramatsu Kazumasa

  Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu K

  Ntt Corp. Tsukuba‐shi Jpn

• Matsushima Hidetaka

  Department of Electronics, School of Engineering, Nagoya University

• HONDA Yoshio

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

• Sawaki Nobuhiko

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

• YAMAGUCHI Masahito

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

• SAWAKI Nobuhiko

  Department of Electronics, Nagoya University

• Honda Yoshio

  Department of Chemistry, Faculty of Science, Kanazawa University

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