Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
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概要
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The epitaxial lateral overgrowth (ELO) of GaN with a stripe tungsten (W) mask pattern is performed by hydride vapor phase epitaxy (HVPE) and the crystalline and optical properties are investigated compared with ELO GaN using SiO_2 mask by characterizations of X-ray rocking curve (XRC), transmission electron microscopy (TEM) and low temperature cathodoluminescence (CL). A buried ELO structure of the W mask with a smooth surface is successfully obtained. The tilt of c-axis on the W mask in the ELO GaN is not observed, but in the case of the SiO_2 mask, c-axis tilts on the mask region at 1 to 10° together with small angle grain boundaries. Half the way from the ELO interface to the surface, the luminescence becomes excitonic over the whole lateral extension region, which indicates the optically high crystalline quality of the material. On the other hand, different kinds of luminescence are observed depending on the position. The difference of these luminescence is caused by the defects and/or impurity incorporation on the mask region due to the tilting of c-axis.
- 社団法人電子情報通信学会の論文
- 2000-04-25
著者
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Honda Y
Department Of Electronics Nagoya University
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Honda Yoshio
Department Of Electronics School Of Engineering Nagoya University Chikusa-ku Nagoya
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Honda Y
Tokyo Inst. Technol. Tokyo Jpn
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Bertram F
Otto-von-guericke‐univ. Magdeburg Magdeburg Deu
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Christen J
Otto-von‐guericke Univ. Magdeburg Deu
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Christen Jurgen
Institute Of Experimental Physics Otto-von-guericke University
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Honda Yoshio
Department Of Electronics Nagoya University
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Honda Y
Hitachi Ltd. Kokubunji‐shi Jpn
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Honda Y
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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MAEDA Takayoshi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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HIRAMATSU Kazumasa
The authors are with the Department of Electrical and Electronic Engineering, Mie University
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MOTOGAITO Atsushi
The authors are with the Department of Electrical and Electronic Engineering, Mie University
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MIYAKE Hideto
The authors are with the Department of Electrical and Electronic Engineering, Mie University
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HONDA Yoshiaki
The authors are with Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd
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IYECHIKA Yasushi
The authors are with Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd
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MAEDA Takayoshi
The authors are with Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd
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BERTRAM Frank
The authors are with Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat
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CHRISTEN Juergen
The authors are with Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat
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HOFFMANN Axel
The author is with Institut fur Festkorperphysik, Technische Universitat
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Hoffmann Axel
The Author Is With Institut Fur Festkorperphysik Technische Universitat
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Maeda T
Tsukuba Research Laboratory Sumitomochemical Co. Ltd.
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Hiramatsu Kazumasa
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Hiramatsu K
Ntt Corp. Tsukuba‐shi Jpn
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Christen Juergen
The Authors Are With Institut Fur Experimentelle Physik Otto-von-guericke-universitat
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Motogaito Atsushi
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Bertram Frank
The Authors Are With Institut Fur Experimentelle Physik Otto-von-guericke-universitat
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Iyechika Yasushi
Tsukuba Research Laboratory Sumitomochemical Co. Ltd.
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