Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
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概要
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Deep electronic levels of Al_xGa_<1-x>N (0.25 <x < 0.60) were investigated by using deep level transient spectroscopy (DLTS) and photocapacitance methods. Si-doped AlGaN layers were grown on AlN/sapphire template by metal-organic chemical vapor deposition. DLTS analysis using a sampling time window up to 100 s showed two dominant deep levels with activation energies (ΔE) larger than 1.0 eV in Al_xGa_<1-x>N with x= 0.25 and 0.37. The densities of these levels were larger than 1 x 10^<16> cm^<-3>. For the Al_<0.60>Ga_<0.40>N sample, the deeper levels (ΔE > 1.5 eV) were detected by the photocapacitance measurement. The origin of the dominant deep level in AlGaN is related to defect complex including anti-site defects and divacancies.
- 2010-06-23
著者
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HASHIZUME Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Ooyama Kimihito
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Sugawara Katsuya
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Te
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Taketomi Hiroyuki
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Taketomi Hiroyuki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Ooyama Kimihito
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Sugawara Katsuya
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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