Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water
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概要
- 論文の詳細を見る
In this paper, we report on the feasibility of oxidizing n-GaN by an electrochemical process in a mixture containing an aqueous solution of tartaric acid and propylene glycol. Photons generated by UV illumination were supplied at the electrolyte-GaN interface during the oxidation process. In the constant-voltage mode, X-ray photoelectron spectroscopy analysis revealed that relatively thick Ga oxide layer formed on the n-GaN surface. However, the oxide surface was very rough. In addition, we found metallic Ga components in the oxide layer or at the oxide-GaN interface for longer oxidation times. On the other hand, a thin Ga2O3 layer with a smooth surface was grown by a constant-current process.
- Japan Society of Applied Physicsの論文
- 2007-04-15
著者
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SATO Taketomo
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Sato T
Hokkaido Univ. Sapporo Jpn
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SHIOZAKI Nanako
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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