Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)

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概要

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• A SiN_x/GaN structure was prepared by ECR-CVD, and annealed at 1000℃ for 2 hours in N_2 ambient. An XPS result showed the outdiffusion of Ga atom to the SiN_x layer during the high-temperature annealing. This could induce deep levels associated with Ga vacancy near the GaN surface, leading to the decrease in the forward current of Schottky diode, in particular at the bias larger than +0.5V. A SiN_x/CN_x/GaN structure was also prepared by ECR-CVD, and annealed in the same condition to diffuse carbon into GaN. An XPS result showed the existence of high-density carbon atoms in the GaN surface. I-V characteristics of Schottky diode showed the drastic increase in current in both forward and reverse regions after the carbon diffusion.

• 2008-07-02

著者

• HASHIZUME Tamotsu

  Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

• KIMURA Takeshi

  Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics Hokkaido University

• Kimura Takeshi

  Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University

• Kimura Takeshi

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

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• FOREWORD
• Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors

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