Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors
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概要
- 論文の詳細を見る
We prove with this paper that InP-based open-gate Field Effect Transistors (FETs) work well as liquid-phase chemical sensors. The open-gate FET clearly exhibited current saturation and a pinch-off behavior in the electrolyte, resulting in a rapid response to the gate bias applied via the electrolyte. A series of sensing measurements showed that the surface potential of the InP linearly changed with the pH values of the electrolytes in a pH range from 3.0 to 12.0. The pH sensitivity of the open-gate FETs depended on the ion species contained in the electrolyte. A Si3N4 layer was useful as an ion selective membrane for the InP open-gate FETs to improve the selectivity of H+ ions.
- Japan Society of Applied Physicsの論文
- 2009-09-25
著者
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Sato Taketomo
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Kita-ku, Sapporo 060-8628, Japan
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Yoshizawa Naoki
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Kita-ku, Sapporo 060-8628, Japan
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