Formation and application of InP porous structures on p-n substrates
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概要
- 論文の詳細を見る
We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-density array of straight pores with 150nm diameter and 5000nm depth was formed by the electrochemical anodization process, where the pore depth could be controlled by the anodization time in the n-type layer. The present p-n InP porous structures show the low optical reflectance in UV-, visible- and near-infrared region. The current transport properties clearly show the rectifying behavior. These features are very promising for practical application to high-efficiency photo-sensitive devices.
- 社団法人電子情報通信学会の論文
- 2009-06-17
著者
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SATO Taketomo
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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岡崎 拓行
北海道大学量子集積エレクトロニクス研究センター
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Sato T
Hokkaido Univ. Sapporo Jpn
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Sato Taketomo
Research Center For Integrated Quantum Electronics Hokkaido University
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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OKAZAKI Hiroyuki
Research Center for Integrated Quantum Electronics, Hokkaido University
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YOSHIZAWA Naoki
Research Center for Integrated Quantum Electronics, Hokkaido University
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Sato Taketomo
Hokkaido Univ. Sapporo Jpn
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Okazaki Hiroyuki
Research Center For Integrated Quantum Electronics Hokkaido University
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Yoshizawa Naoki
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Kita-ku, Sapporo 060-8628, Japan
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