OKAZAKI Hiroyuki | Research Center for Integrated Quantum Electronics, Hokkaido University
スポンサーリンク
概要
関連著者
-
岡崎 拓行
北海道大学量子集積エレクトロニクス研究センター
-
OKAZAKI Hiroyuki
Research Center for Integrated Quantum Electronics, Hokkaido University
-
Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
-
Sato T
Hokkaido Univ. Sapporo Jpn
-
Sato Taketomo
Research Center For Integrated Quantum Electronics Hokkaido University
-
Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
-
Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
-
Sato Taketomo
Hokkaido Univ. Sapporo Jpn
-
Okazaki Hiroyuki
Research Center For Integrated Quantum Electronics Hokkaido University
-
SATO Taketomo
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
-
Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
-
YOSHIZAWA Naoki
Research Center for Integrated Quantum Electronics, Hokkaido University
-
Yoshizawa Naoki
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Kita-ku, Sapporo 060-8628, Japan
-
橋詰 保
北海道大学量子集積エレクトロニクス研究センター
-
佐藤 威友
北海道大学量子集積エレクトロニクス研究センター
-
吉澤 直樹
北海道大学量子集積エレクトロニクス研究センター
-
Hashizume T
Advanced Research Laboratory Hitachi Ltd.:department Of Physics Tokyo Institute Of Technology
-
Hashizume Tomihiro
Institute For Materials Research (imr) Tohoku University:(present Address)advanced Research Laborato
-
Hitosugi Taro
Department Of Superconductivity University Of Tokyo
-
Hashizume Tamotsu
Hokkaido Univ. Sapporo Jpn
-
橋詰 保
北大量集センター情報科学研究科:jst-crest
-
Hashizume T
Institute For Materials Research (imr) Tohoku University:(present Address)advanced Research Laborato
-
Hashizume Tamotsu
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science &
-
橋詰 保
北海道大学 情報科学研究科 量子集積エレクトロニクス研究センター
著作論文
- 電気化学的手法によるInP多孔質構造の形成と高感度化学センサへの応用(半導体のプロセス・デバイス(表面,界面,信頼性),一般)
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Formation and application of InP porous structures on p-n substrates
- Formation and application of InP porous structures on p-n substrates
- Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching