Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
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概要
- 論文の詳細を見る
We report the electrochemical formation of porous structures on n-type epitaxial layers grown on p-type InP substrates in view of the application to the photoelectric conversion devices. We successfully formed the arrays of regular-sized pores whose diameter and depth could be changed by the doping density and anodic conditions, respectively. From the photo I-V measurements, we confirmed the optical absorption process in the porous layers whose photovoltaic response strongly depended on the structural properties.
- 社団法人電子情報通信学会の論文
- 2010-06-23
著者
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SATO Taketomo
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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岡崎 拓行
北海道大学量子集積エレクトロニクス研究センター
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Sato T
Hokkaido Univ. Sapporo Jpn
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Sato Taketomo
Research Center For Integrated Quantum Electronics Hokkaido University
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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OKAZAKI Hiroyuki
Research Center for Integrated Quantum Electronics, Hokkaido University
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Sato Taketomo
Hokkaido Univ. Sapporo Jpn
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Hashizume Tamotsu
Hokkaido Univ. Sapporo Jpn
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Okazaki Hiroyuki
Research Center For Integrated Quantum Electronics Hokkaido University
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