岡崎 拓行 | 北海道大学量子集積エレクトロニクス研究センター
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概要
関連著者
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岡崎 拓行
北海道大学量子集積エレクトロニクス研究センター
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OKAZAKI Hiroyuki
Research Center for Integrated Quantum Electronics, Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Sato T
Hokkaido Univ. Sapporo Jpn
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Sato Taketomo
Research Center For Integrated Quantum Electronics Hokkaido University
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Sato Taketomo
Hokkaido Univ. Sapporo Jpn
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Okazaki Hiroyuki
Research Center For Integrated Quantum Electronics Hokkaido University
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SATO Taketomo
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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YOSHIZAWA Naoki
Research Center for Integrated Quantum Electronics, Hokkaido University
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Yoshizawa Naoki
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Kita-ku, Sapporo 060-8628, Japan
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橋詰 保
北海道大学量子集積エレクトロニクス研究センター
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佐藤 威友
北海道大学量子集積エレクトロニクス研究センター
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吉澤 直樹
北海道大学量子集積エレクトロニクス研究センター
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Hashizume T
Advanced Research Laboratory Hitachi Ltd.:department Of Physics Tokyo Institute Of Technology
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Hashizume Tomihiro
Institute For Materials Research (imr) Tohoku University:(present Address)advanced Research Laborato
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Hitosugi Taro
Department Of Superconductivity University Of Tokyo
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Hashizume Tamotsu
Hokkaido Univ. Sapporo Jpn
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橋詰 保
北大量集センター情報科学研究科:jst-crest
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Hashizume T
Institute For Materials Research (imr) Tohoku University:(present Address)advanced Research Laborato
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science &
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橋詰 保
北海道大学 情報科学研究科 量子集積エレクトロニクス研究センター
著作論文
- 電気化学的手法によるInP多孔質構造の形成と高感度化学センサへの応用(半導体のプロセス・デバイス(表面,界面,信頼性),一般)
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Formation and application of InP porous structures on p-n substrates
- Formation and application of InP porous structures on p-n substrates
- Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching