Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching

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概要

• 論文の詳細を見る

• Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared light ranges. The reflectance strongly depended on the surface morphology of the porous structures prepared by the electrochemical process, and the lowest reflectance of 0.1% in the visible light range was obtained from a sample after the irregular top layer was completely removed. Large anodic photocurrents were obtained on the InP porous structures that had low reflectance surfaces with deeper pores.

• The Electrochemical Societyの論文

著者

• 岡崎 拓行

  北海道大学量子集積エレクトロニクス研究センター

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics Hokkaido University

• Sato T

  Hokkaido Univ. Sapporo Jpn

• Sato Taketomo

  Research Center For Integrated Quantum Electronics Hokkaido University

• Sato Taketomo

  Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu

• Sato Taketomo

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• OKAZAKI Hiroyuki

  Research Center for Integrated Quantum Electronics, Hokkaido University

• Sato Taketomo

  Hokkaido Univ. Sapporo Jpn

• Okazaki Hiroyuki

  Research Center For Integrated Quantum Electronics Hokkaido University

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