Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates
スポンサーリンク
概要
- 論文の詳細を見る
The mechanism of the cross-sectional evolution during the selective growth of GaAs quantum wires (QWRs) on (111)B-patterned substrates was studied in detail both experimentally and theoretically. For this purpose, growth experiments were carried out on <-1-12>-oriented wires by systematically changing growth conditions and pattern sizes. A detailed investigation on cross sections of wires has shown that the lateral wire width is determined by facet boundaries (FBs) within AlGaAs layers separating growth regions on top facets from those on side facets of mesa structures. FBs were found to be planar or curved, depending on initial pattern sizes and growth conditions. Computer simulation based on a phenomenological growth model was attempted, taking account of the facet-angle-dependent lifetime of adatoms. The simulation well reproduced the experimentally observed growth features including the evolution of FBs, indicating that the cross sections of wires grown on (111)B-patterned substrates are kinetically controlled by the pattern sizes and growth conditions.
- Japan Society of Applied Physicsの論文
- 2005-04-30
著者
-
Sato T
Hokkaido Univ. Sapporo Jpn
-
Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
-
TAMAI Isao
Graduate School of Electronics and Information Engineering and Research Center for Integrated Quantu
-
HASEGAWA Hideki
Graduate School of Electronics and Information Engineering and Research Center for Integrated Quantu
関連論文
- Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells
- 平成20年度リフレッシュ理科教室開催報告-サイエンスオリエンテーリング2008 in 札幌- : 北海道支部・北海道大学会場
- Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism
- Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure
- Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress(Plenary,Heterostructure Microelectronics with TWHM2005)
- Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices
- Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process (Special Issue: Solid State Devices & Materials)
- Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates
- Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes
- The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process
- Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
- Performance of open-gate AlGaN/GaN HFET in various kinds of liquids
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors
- Formation and application of InP porous structures on p-n substrates
- Formation and application of InP porous structures on p-n substrates
- Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)
- Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process
- Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
- Hexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs
- Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy
- Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions
- Optical Properties of Size-Controlled Porous Nanostructures Formed on n-InP (001) Substrates by Electrochemical Process
- Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water
- Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits
- Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates
- Investigation of Side-gating Effects in GaAs-based Quantum Wire Transistor (QWRTr) utilizing Nanosized Schottky Gates
- Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates
- Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates
- Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates
- Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation
- Cross-Sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates
- Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted Selective MBE on Pre-Patterned Substrates
- Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy
- Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs
- Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices
- Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process
- Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures
- Self-assembled formation of uniform InP nanopore arrays by electrochemical anodization in HCl based electrolyte
- Influence of Initial Amorphous Layer Deposition Temperature on Lateral Solid-Phase Epitaxy of Silicon
- Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates
- Formation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates
- Large Schottky Barrier Heights ort Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process
- Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism
- Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots
- Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching
- Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure
- Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates
- Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates