Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures
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概要
- 論文の詳細を見る
A photoelectrochemical (PEC) process was developed to remove the irregular top layer from InP porous nanostructures. After anodic formation of a nanopore array, the PEC process repeated in the same electrolyte under illumination. The etching rate of the pore surfaces was strongly associated with their structural properties, being greater in the irregular top layer. The irregular top layer was completely removed by monitoring and controlling the anodic photocurrents in the ramped bias mode.
- The Electrochemical Societyの論文
- 2008-02-20
著者
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Sato T
Hokkaido Univ. Sapporo Jpn
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Sato Taketomo
Hokkaido Univ. Sapporo Jpn
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