Size-Controlled Porous Nanostructures Formed on InP(001) Substrates by Two-Step Electrochemical Process
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概要
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A high-density array of size-controlled porous nanostructures was formed on InP(001) substrates by a two-step electrochemical process using anodic and cathodic reactions. After the formation of InP porous structures by anodization, we subsequently applied cathodic decomposition to the reduction of the lateral thickness of the InP pore wall. The etching rate of the pore wall was extremely low and strongly dependent on the cathodic bias and crystal orientations of the wall surface. The thickness of InP walls could be precisely controlled in the range of 15–30 nm by changing cathodic bias and cathodic decomposition time. From the PL measurement at room temperature, the porous structures showed strong blue-shifted emissions due to quantum confinement in thinner InP nanowalls.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-07-15
著者
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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FUJINO Toshiyuki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Fujino Toshiyuki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North-13, West-8, Sapporo 060-8628, Japan
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