Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection

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概要

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• The influence of interface state density and bulk carrier lifetime on the dependencies of photocapacitance versus wide range of gate bias ($-0.1$ to $-3$ V) and light intensity ($10^{9}$ to $10^{20}$ photon cm-2 s-1) was studied for metal/insulator/n-GaN UV light photodetector by means of numerical simulations. The light detection limit and photocapacitance saturation were analyzed in terms of the interface charge and interface Fermi level for electrons and holes and effective interface recombination velocity. It was proven that the excess carrier recombination through interface states is the main reason of photocapacitance signal quenching. It was found that the photodetector can work in various modes (on--off or quantitative light measurement) adjusted by the gate bias. A comparison between experimental data and theoretical capacitance-light intensity characteristics was made. A new method for the determination of the interface state density distribution from capacitance--voltage-light intensity measurements was also proposed.

• 2011-04-25

著者

• Mizue Chihoko

  Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• Miczek Marcin

  Department of Surface and Nanostructure Physics, Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland

• Mizue Chihoko

  Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan

• Bidzinski Piotr

  Department of Surface and Nanostructure Physics, Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland

• Adamowicz Boguslawa

  Department of Surface and Nanostructure Physics, Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland

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• FOREWORD
• Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors

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