Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process
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概要
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Hydrogen sensing characteristics of Pt/InP Schottky diodes fabricated by electro-deposition were investigated. Such diodes gave high Schottky barrier heights (SBHs) of 650–810 meV. Upon exposure to hydrogen in air, the diodes exhibited a remarkable increase in forward and reverse currents. The saturation current on a log scale and the transient speed changed in proportion to the square root of the hydrogen pressure, $P_{\text{H2}}$. Upon exposure to hydrogen in vacuum or in nitrogen, a much larger and much faster increase in current took place. However, the saturation current was almost independent of $P_{\text{H2}}$, and the current increase remained almost the same after the hydrogen was removed. The sensing mechanism is explained in terms of changes in SBH caused by interface dipoles formed at Pt/InP interfaces due to adsorbed atomic hydrogen. Transient waveforms and dependence of saturation current and transient time constant on $P_{\text{H2}}$ were explained quantitatively by a simple theory where processes including atomic hydrogen generation, transport, storage, adsorption, desorption, and reaction with oxygen are effectively included.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Kimura Takeshi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North-13, West-8, Sapporo 060-8628, Japan
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Hashizume Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North-13, West-8, Sapporo 060-8628, Japan
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Kimura Takeshi
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North-13, West-8, Sapporo 060-8628, Japan
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