Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition
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概要
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We have investigated interface properties of Al_2O_3/GaN and Al_2O_3/AlGaN/GaN structures that are promising for realizing MOSFETs and improving operation stability of HEMTs. An Al_2O_3 layer was deposited on n-GaN and AlGaN/GaN heterostructure samples by atomic layer deposition (ALD) using TMA and H_2O as precursors. The bandgap of Al_2O_3 was estimated to be 6.7eV from the X-ray photoelectron spectroscopy analysis. The capacitance-voltage (C-V) measurement was carried out on the MIS structures. After the post-deposition annealing at 400℃, we observed the C-V curve close to the ideal one in the Al_2O_3/n-GaN structure. We also observed systematic decreases in accumulation capacitance and threshold voltage in the C-V curves in the Al_2O_3/AlGaN/GaN structure, with increasing the thickness of the Al_2O_3 layer. From the difference between experimental and calculated values of the threshold voltage, the density of electronic state at the Al_2O_3/AlGaN interface was estimated to be 〜5x10^<12>cm^<-2>eV^<-1> or less. These results indicate ALD-Al_2O_3 is promising for an insulator for a gate structure and a surface stabilizing layer in AlGaN/GaN HEMTs.
- 2009-06-17
著者
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HASHIZUME Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Ooyama Kimihito
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Mizue Chihoko
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Hori Yujin
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe):graduate School Of Information Science An
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Mizue Chihoko
Research Center For Integrated Quantum Electronics (rciqe):graduate School Of Information Science An
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Ooyama Kimihito
Research Center For Integrated Quantum Electronics (rciqe):graduate School Of Information Science An
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Hori Yujin
Research Center For Integrated Quantum Electronics (rciqe):graduate School Of Information Science An
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- FOREWORD
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