Transport Characterization of Schottky In-Plane Gate Al_<0.3>Ga_<0.7>As/GaAs Quantum Wire Transistors Realized by In-Situ Electrochemical Process
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概要
- 論文の詳細を見る
The low-temperature transport properties of the novel Al_<0.3>Ga_<0.7>As/GaAs Schottky in-plane gate (IPG) quantum wire transistor realized by the in-situ electrochemical process were studied. The device showed good field-effect transistor (FET) characteristics with excellent gate control and complete pinch-off. Quantized conductance in the units of 2e^2/h was clearly seen at 4 K. The first plateau persisted up to 40 K. Shubnikov-de Haas oscillation measurements showed an extremely weak dependence of the carrier density on the gate bias, indicating that the Schottky IPG controls the wire width without changing the sheet carrier density. Application of a magnetic field widened the conductance plateaus. Under harmonic approximation for the electrostatic confinement potentials, a subband spacing of &plank;ω_0=4-5 meV was obtained.
- 社団法人応用物理学会の論文
- 1995-12-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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OKADA HIROSHI
Botanical Gardens, Faculty of Science, Osaka City University
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OKADA Hiroshi
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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Okada H
Botanical Gardens Faculty Of Science Osaka City University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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