Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-01-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Satoh Yoshihiro
Division of Pathology, Isehara Kyodo Hospital
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FUJIKURA Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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OKADA HIROSHI
Botanical Gardens, Faculty of Science, Osaka City University
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OKADA Hiroshi
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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Satoh Yoshihiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Satoh Yoshihiro
Mitsubishi Electric Corporation
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藤倉 序章
北海道大学量子界面エレクトロニクス研究センター:電子情報工学専攻
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Okada H
Faculty Of Engineering University Of Toyama
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JINUSHI Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Jinushi Kei-ichiroh
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Satoh Y
Tokyo Inst. Technol. Tokyo Jpn
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Okada H
Botanical Gardens Faculty Of Science Osaka City University
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Satoh Y
Division Of Pathology Isehara Kyodo Hospital
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Satou Yoshihiro
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University
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Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of
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Jinushi Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of
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