Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes
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概要
- 論文の詳細を見る
Using voltammetry, X-ray photoemission spectroscopy (XPS), in situ electrochemical scanning tunneling microscopy (STM), ex situ atomic force microscopy (AFM) and scanning electron microscope (SEM) measurements, electrochemical etching modes for n-InP surfaces were investigated and optimized for uniform and controlled etching in an HCl electrolyte. The voltammograms indicated the presence of active and passive regions. The surfaces obtained in the active region were clean and featureless with an rms roughness of 1.8 nm. On the other hand, the oxide covered surfaces obtained in the passive region were nonuniform and porous. Etching characteristics of the d.c. photo-anodic mode and the pulsed avalanche mode were then investigated and compared. Both modes were found to be highly controllable and produced uniform and clean surfaces, consuming eight holes per molecule of InP. In particular, the pulsed avalanche etching mode realized an extremely high etch depth controllability of 3x10^-5 nm/pulse.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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SATO Taketomo
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Sato T
Hokkaido Univ. Sapporo Jpn
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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KANESHIRO Chinami
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Kaneshiro Chinami
Kanagawa Institute Of Technology
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Kaneshiro C
Kanagawa Institute Of Technology
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Sato T
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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