Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

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概要

• 論文の詳細を見る

• An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gateleakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS= +4 V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3 V, resulting in the quasi-normally-off mode operation.

• 2004-06-15

著者

• Sano Eiichi

  Research Center For Integrated Quantum Electronics Hokkaido University

• HASHIZUME Tamotsu

  Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

• ANANTATHANASARN Sanguan

  Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

• NEGORO Noboru

  Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

• HASEGAWA Hideki

  Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

• KUMAKURA Kazuhide

  NTT Basic Research Laboratories, NTT Corporation

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

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