A Theoretical Comparison of Strained-Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors and Conventional Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using a Drift-Diffusion-Based Simulator

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概要

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• Strained-Si-on-insulator (strained-SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) were compared to conventional SOI MOSFETs in terms of short-channel effects and delay time using a drift-diffusion-based device simulator. In the case of 90 nm gate devices, threshold voltage $V_{\text{th}}$ for strained-SOI nMOSFETs decreased with decreasing conduction-band edge discontinuity, while $V_{\text{th}}$ dependence on conduction-band edge and valence-band edge discontinuities for strained-SOI pMOSFETs were complicated. An analytical expression for $V_{\text{th}}$ in strained-SOI pMOSFETs could explain the simulated results. The $V_{\text{th}}$ shift for strained-SOI nMOSFETs with shortening the gate length was slightly smaller than that for conventional SOI nMOSFETs, while $V_{\text{th}}$ shift for strained-SOI pMOSFETs was larger than that for conventional SOI nMOSFETs. The $V_{\text{th}}$ shift for strained-SOI nMOSFETs with a strain-Si thickness $t_{\text{Si}}$ greater than the source and drain junction depth $x_{\text{j}}$ was smaller than that for strained-SOI nMOSFETs with $t_{\text{Si}}<x_{\text{j}}$. The strained-SOI MOSFETs were approximately 15% faster than conventional SOI MOSFETs when the saturation velocities were assumed to be $10^{7}$ cm/s for both strained- and conventional SOI MOSFETs. Strained-SOI nMOSFETs are 1.9 times faster than conventional SOI nMOSFETs when the electron velocity overshoot is developed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-10-15

著者

• Sano Eiichi

  Research Center For Integrated Quantum Electronics Hokkaido University

• Sano Eiichi

  Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University

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