Simulation of Carrier Transport across Heterojunctions Based on Drift-Diffusion Model Incorporating an Effective Potential : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
We applied an effective potential method to drift-diffusion-based simulation of carrier transport across heterojunctions. Simulations revealed that the effective potential method can explain the experimental results of current-voltage characteristics for a GaAs/Al_xGa_<1-x>As heterostructure barrier varactor and the resistances of non-alloyed ohmic contacts in high electron mobility transistors (HEMTs).
- 社団法人応用物理学会の論文
- 2002-11-15
著者
関連論文
- Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- 招待講演 Theoretical study on graphene field-effect transistors (Silicon devices and materials)
- Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors
- 招待講演 Theoretical study on graphene field-effect transistors (Electron devices)
- W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- Evaluation of Digitally Controlled PLL by Clock-Period Comparison(Analog Circuits and Related SoC Integration Technologies)
- Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
- Analytical Expressions for Maximum Operating Frequencies of Emitter-Coupled Logic and Source-Coupled FET Logic Toggle Flip-Flops(Electronic Circuits)
- Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect
- Monte Carlo Simulation of InP/InGaAs Heterojunction Bipolar Transistors Considering Quantum Effects through an Effective Potential : Semiconductors
- Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels
- Pulse Compression by Quasi-Steady Propagation along Switch Lines
- A Theoretical Comparison of Strained-Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors and Conventional Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using a Drift-Diffusion-Based Simulator
- Simulation of Carrier Transport across Heterojunctions Based on Drift-Diffusion Model Incorporating an Effective Potential : Semiconductors
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors
- Threshold Behavior of Photoinduced Plasmon-Resonant Self-Oscillation in a New Interdigitated Grating Gates Device
- Terahertz Wave Filter from Cascaded Thin-Metal-Film Meshes with a Triangular Array of Hexagonal Holes
- Development of Solitons in Composite Right- and Left-Handed Transmission Lines Periodically Loaded with Varactors with Symmetrical Capacitance–Voltage Characteristics
- Terahertz Transmission Property of a Thin Metal Hole-Array Filter
- Mode-Expansion Analysis of Evanescent Modes Excited by Electrons Moving above Metal Grating
- Transmission Characteristics through Two-Dimensional Periodic Hole Arrays Perforated in Perfect Conductors