Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels
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概要
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A potential difference between the two layers of bilayer graphene caused by charge doping and/or an applied gate field can open a bandgap. In this paper, bandgap and charge controllability in graphene field-effect transistors (GFETs) with doped bilayer graphene channels is clarified by solving a one-dimensional Poisson’s equation, including electron and hole concentrations derived from a tight-binding Hamiltonian. The calculations show that a high doping concentration of $10^{13}$ cm-2 is required to produce a bandgap of 0.3 eV and that this degrades the charge controllability in GFETs.
- 2009-09-25
著者
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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