Threshold Behavior of Photoinduced Plasmon-Resonant Self-Oscillation in a New Interdigitated Grating Gates Device
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概要
- 論文の詳細を見る
The new doubly interdigitated grating gate high-electron-mobility transistor (HEMT) has been subjected at room temperature to a 1.5 μm cw laser beam. The observed photoresponse shows a threshold behavior as a function of drain-to-source bias for different gate voltages. The result was interpreted as a clear signature of the self-oscillation of plasma waves.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Meziani Yahya
Research Institute Of Electrical Communication Tohoku University
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Hanabe Mitsuhiro
Research Institute Of Electrical Communication Tohoku University
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
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Hanabe Mitsuhiro
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
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Meziani Yahya
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
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