Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors
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概要
- 論文の詳細を見る
Energy band structures for monolayer and bilayer armchair graphene nanoribbons on SiC substrates are investigated using a nearest-neighbor tight-binding approximation with two distinct models (interlayer coupling and substrate-induced asymmetry models). Differences in the band structures and charge distributions based on the two models are clarified. The calculation results suggest that wide films of bilayer armchair graphene on SiC substrates should be used for electronics applications such as graphene-channel field-effect transistors.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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