Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter

スポンサーリンク

概要

• 論文の詳細を見る

• We have proposed a terahertz (THz) emitter utilizing two-dimensional plasmons (2DPs) in a super-grating dual-gate (SGG) high electron mobility transistor (HEMT). The plasmon under each grating gate has a unique feature that its resonant frequency is determined by the plasma-wave velocity over the gate length. Since the drain bias voltage causes a linear potential slope from the source to drain area, the sheet electron densities in periodically distributed 2DP cavities are dispersed. As a result, all the resonant frequencies are dispersed and undesirable spectral broadening occurs. A SGG structure can compensate for the sheet electron density distribution by modulating the grating dimension. The finite difference time domain simulation confirms its spectral narrowing effect. Within a wide detuning range for the gate and drain bias voltages giving a frequency shifting of ±0.5THz from an optimum condition, the SGG structure can preserve the spectral narrowing effect.

• （社）電子情報通信学会の論文
• 2009-05-01

著者

• Otsuji Taiichi

  Research Institute Of Electrical Communication Tohoku University

• Kang HyunChul

  Research Institute of Electrical Communication, Tohoku University

• Nishimura Takuya

  Research Institute of Electrical Communication, Tohoku University

• Kang Hyunchul

  Research Institute Of Electrical Communication Tohoku University

• MAGOME Nobuhiro

  Research Institute of Electrical Communication, Tohoku University

• Magome Nobuhiro

  Research Institute Of Electrical Communication Tohoku University

• Nishimura Takuya

  Research Institute Of Electrical Communication Tohoku University

• Otsuji Taiichi

  Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan

関連論文

• Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• Threshold behavior of photoinduced plasmons-resonant self-oscillation in a new interdigitated grating gates device (Special issue: Solid state devices and materials)
• Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
• Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
• A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure
• Device Model for Graphene Nanoribbon Phototransistor
• Tunneling Current-Voltage Characteristics of Graphene Field-Effect Transistor
• Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
• 招待講演 Theoretical study on graphene field-effect transistors (Silicon devices and materials)
• Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors
• 招待講演 Theoretical study on graphene field-effect transistors (Electron devices)
• Resonant terahertz photomixing in integrated HEMT-QWIP device
• Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
• Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation
• Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• An Intensity Modulator for Terahertz Electromagnetic Waves Utilizing Two-Dimensional Plasmon Resonance in a Dual-Grating-Gate High-Electron-Mobility Transistor
• Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter
• Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• Graphene Nanoribbon Phototransistor: Proposal and Analysis
• Effect of Heating and Cooling of Photogenerated Electron--Hole Plasma in Optically Pumped Graphene on Population Inversion
• Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect
• Characteristics of p--i--n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures
• Theoretical Study of Population Inversion in Graphene under Pulse Excitation
• Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
• Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
• Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
• Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
• Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
• Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)
• Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels
• Pulse Compression by Quasi-Steady Propagation along Switch Lines
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel High Electron Mobility Transistors
• Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
• Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors
• Threshold Behavior of Photoinduced Plasmon-Resonant Self-Oscillation in a New Interdigitated Grating Gates Device
• Development of Solitons in Composite Right- and Left-Handed Transmission Lines Periodically Loaded with Varactors with Symmetrical Capacitance–Voltage Characteristics
• Formation of Diamond-Like Carbon Films by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition

もっと見る 閉じる

スポンサーリンク