Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
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概要
- 論文の詳細を見る
A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaP/InGaAs/GaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature. ©2006 American Institute of Physics
- American Institute of Physicsの論文
- 2006-12-25
著者
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Otsuji Taiichi
Japan Science And Technology Agency Crest
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HANABE Mitsuhiro
Kyushu Institute of Technology
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