Investigation of Graphene Field Effect Transistors with Al<sub>2</sub>O<sub>3</sub> Gate Dielectrics Formed by Metal Oxidation
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概要
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We propose the epitaxial graphene field-effect transistors (EG-FETs) with Al<sub>2</sub>O<sub>3</sub> gate dielectric formed by metal oxidation on semi-insulating 6H-SiC substrate. The Al<sub>2</sub>O<sub>3</sub> gate dielectric layer was formed by thermally oxidizing a thin Al film at 500 °C in an O<sub>2</sub> ambient. The electrical characteristics of EG-FETs with Al<sub>2</sub>O<sub>3</sub> gate dielectric have been investigated, which exhibits p-type behavior with the field effect mobility of 120 cm2 V-1 s-1. After the Al<sub>2</sub>O<sub>3</sub> formation, the FWHM of G$'$ and D peaks in the Raman-scattering spectra increased, indicating degradation of graphene and thereby accounting for the low field effect mobility of the EG-FETs. This finding suggests that the optimization of post growth heat treatments, such as oxidation and metallization, should play a decisive role in tuning the quality of graphene and the performance of the device made thereof.
- 2011-07-25
著者
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Suemitsu Maki
Research Institute Of Electrical Communication Tohoku University
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Fukidome Hirokazu
Research Center For Photoenergetics Of Organic Materials Osaka University
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Suemitsu Tetsuya
Research Institute Of Electrical Communication Tohoku University
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Takahashi Ryota
Research Institute Of Electrical Communications Tohoku University
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Handa Hiroyuki
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Tetsuya
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Fukidome Hirokazu
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Jung Myung-Ho
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Takahashi Ryota
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Suemitsu Tetsuya
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Handa Hiroyuki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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