Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (I)—Optimization of the HF Treatment—
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概要
- 論文の詳細を見る
Several variations of fluoric acid (HF) treatments of silicon substrates were examined for their adaptability as a pretreatment method for a silicon epitaxy process. Treatments with and without distilled, deionized (DI) water rinse, of different HF concentrations, and of different methods of HF supply were tested and their residual carbonic impurity contents were measured using RHEED. As a result, HF treatments by themselves were found to be insufficient in passivating the surface dangling bonds irrespective of the method of HF supply: dipping into the solution or exposure to the vapor. The optimum procedure of HF treatment thus proposed is a succession of (a) HF dipping, (b) DI-water rinsing, (c) nitrogen-gas blowing, and (d) UV-ozone cleaning.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-12-20
著者
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Miyamoto Nobuo
Research Development Corporation Of Japan (jrdc)
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Miyamoto Nobuo
Research Institute of Electrical Communication, Tohoku University, Sendai 980
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Kaneko Tetsuya
Research Institute of Electrical Communication, Tohoku University, Sendai 980
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Suemitsu Maki
Research Institute of Electrical Communication, Tohoku University, Sendai 980
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- Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)—in situ UVOC