Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-05-15

著者

• Morita T

  Chiba Univ. Chiba Jpn

• Suemitsu M

  Tohoku Univ. Sendai Jpn

• Suemitsu Maki

  Research Institute Of Electrical Communication Tohoku University

• NAKAZAWA Hideki

  Research Institute of Electrical Communication, Tohoku University

• MIYAMOTO Nobuo

  Faculty of Engineering, Tohoku Gakuin University

• MORITA Tomoyuki

  Oki Electric Industry Co., Ltd.,

• Miyamoto N

  Spring-8 Service Co. Ltd.

• Nakazawa Hidenobu

  Central Laboratory Asahi Chemical Industry Co. Ltd.

• Miyamoto Nobuo

  Faculty Of Engineering Tohoku Gakuin University

• Nakazawa H

  Central Laboratory Asahi Chemical Industry Co. Ltd.

• MIYAMOTO Naokazu

  SPring-8 Service Co., Ltd.

• Suemitsu Maki

  Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan

関連論文

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• Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
• Growth Mode and Characteristics of the O_2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement
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