Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition

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概要

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• We have deposited Si-incorporated diamond-like carbon (DLC) films by radio-frequency plasma-enhanced chemical vapor deposition using methane, argon, and organosilanes, and investigated the effects of Si source gas (monomethylsilane, dimethylsilane) and substrate bias (negative dc bias, negative pulse bias) on the structure and the mechanical and tribological properties of the films. The Si-DLC films deposited using monomethylsilane as a Si source gas tended to have a higher Si atomic fraction ratio [$\text{Si}/(\text{Si}+\text{C})$] than the films deposited using dimethylsilane. Friction coefficient and internal stress decreased by the incorporation of Si into the films. However, many particles composed mainly of Si were observed on the film surfaces when deposition using a dc bias was carried out at higher monomethylsilane or dimethylsilane flow ratios. It was found that for both the Si source gases, the use of a pulse bias was effective in suppressing the formation of particles and further decreasing friction coefficient and internal stress. Additionally, the pulse-biased Si-DLC films were found to have a higher wear resistance than the dc-biased Si-DLC films.

• 2009-11-25

著者

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Suemitsu Maki

  Research Institute Of Electrical Communication Tohoku University

• Narita Yuzuru

  Yamagata University

• Abe Toshimi

  Tohoku Institute Of Technology

• Yasui Kanji

  Nagaoka Univ. Technol. Nagaoka‐shi Jpn

• Itoh Takashi

  Center For Information And Sciences Nippon Medical School

• Kinoshita Takeshi

  Graduate School Of Science And Engineering Yamaguchi University

• Enta Yoshiharu

  Graduate School Of Science And Technology Hirosaki University

• Nakazawa Hideki

  Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

• Kaimori Yuhta

  Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

• Asai Yuhki

  Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

• Mashita Masao

  Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

• Itoh Takashi

  Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan

• Narita Yuzuru

  Yamagata University, Yonezawa, Yamagata 992-8510, Japan

• Yasui Kanji

  Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan

• Abe Toshimi

  Tohoku Institute of Technology, Sendai 982-8577, Japan

• Suemitsu Maki

  Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan

• Kinoshita Takeshi

  Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

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