(100)-Oriented 3C-SiC Polycrystalline Film Grown on SiO_2 by Hot-Mesh Chemical Vapor Deposition Using Monomethylsilane and Hydrogen
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-07-10
著者
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YASUI Kanji
Department of Electronics, Faculty of Engineering, Nagaoka University of Technology
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Narita Yuzuru
Department Of Electrical Electronic And Information Engineering Nagaoka University Of Technology
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ETO Jumpei
Department of Electrical Engineering, Nagaoka University of Technology
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KURIMOTO Taishi
Department of Electrical Engineering, Nagaoka University of Technology
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AKAHANE Tadashi
Department of Electrical Engineering, Nagaoka University of Technology
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Akahane T
Department Of Electrical Engineering Faculty Of Engineering Nagaoka University Of Technology
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Yasui Kanji
Department Of Electrical Engineering Nagaoka University Of Technology
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Akahane T
Faculty Of Engineering Nagaoka University Of Technology
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Akahane Tadashi
Department Of Electrical Engineering Faculty Of Engineering Nagaoka University Of Technology
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Akahane Tadashi
Nagaoka Univ. Technol. Nagaoka‐shi Jpn
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Eto Jumpei
Department Of Electrical Engineering Nagaoka University Of Technology
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Yasui Kanji
Nagaoka Univ. Technol. Nagaoka‐shi Jpn
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Narita Yuzuru
Department Of Electrical Engineering Nagaoka University Of Technology
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Kurimoto Taishi
Department Of Electrical Engineering Nagaoka University Of Technology
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Akahane Tadashi
Deparment Of Electrical Engineering Faculty Of Engineering The Technological University Of Nagaoka
関連論文
- Determination of the Anisotropic Refractive Indices of Twisted Nematic Liquid Crystals by Means of Renormalized Transmission Ellipsometry : Instrumentation, Measurement, and Fabrication Technology
- Hydrogen-Radical-Assisted Chemical Vapor Deposition of SiN Films Using Si(CH_3)_4 and NH_2CH_3
- Chemical Vapor Deposition of Low Hydrogen Content Silicon Nitride Films Using Microwave-Excited Hydrogen Radicals
- Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane
- (100)-Oriented 3C-SiC Polycrystalline Film Grown on SiO_2 by Hot-Mesh Chemical Vapor Deposition Using Monomethylsilane and Hydrogen
- Low-Temperature Heteroepitaxial Growth of SiC on (100) Si Using Hot-Mesh Chemical Vapor Deposition
- Determination of Film Thickness and Anisotropy of the Refractive Indices in 4-octyl-4'-cyanobiphenyl Liquid Crystalline Free-Standing Films
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- Optical Compensation Method for In-plane Switching Twisted Nematic Mode
- Determination of Polar Anchoring Strength at Vertical Alignment Nematic Liquid Crystal-Wall Interface Using Thin Hybrid Alignment Nematic Cell
- Amorphous In-Plane Switching Twisted Nematic Liquid Crystal Displays Fabricated without Rubbing Process Show a Wide Viewing Angle and Fast Response Characteristics
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