Growth of GaN Films by Hot-Mesh Chemical Vapor Deposition Using Ruthenium-Coated Tungsten Mesh
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概要
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GaN films were grown on AlN/SiC/Si substrates by hot-mesh chemical vapor deposition (CVD) using ruthenium (Ru)-coated tungsten (W)-mesh. When using the Ru-coated mesh, the crystallinity of the GaN films did not degrade until a mesh temperature of 1000 °C, while the crystallinity markedly degraded at lower than 1100 °C when using the W-mesh. From the photoluminescence (PL) spectra of GaN films grown using the Ru-coated W-mesh, strong near-band-edge emission without yellow luminescence can be observed. In order to elucidate the difference in the decomposition efficiency of ammonia gas, the hydrogen radical density generated by the heated W-mesh and Ru-coated mesh was also evaluated using tungsten phosphate glass plates.
- 2008-01-25
著者
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TAKATA Masasuke
Nagaoka University of Technology
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Suemitsu Maki
Center For Interdisciplinary Research Tohoku University
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ITO Takashi
Center for Information and Sciences, Nippon Medical School
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FUKADA Yusuke
Nagaoka University of Technology
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Nakazawa Hideki
Faculty Of Science And Technology Hirosaki University
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Akahane Tadashi
Nagaoka Univ. Technol. Nagaoka‐shi Jpn
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Yasui Kanji
Nagaoka Univ. Technol. Nagaoka‐shi Jpn
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Narita Yuzuru
Kyusyu Institute of Technology, Kitakyushu 804-8550, Japan
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Kuroki Yuichiro
Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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Nakazawa Hideki
Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Endou Tetsuro
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Ito Takashi
Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Fukada Yusuke
Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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Akahane Tadashi
Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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