Incubation-Free Growth of Polycrystalline Si Films by Plasma-Enhanced Chemical Vapor Deposition Using Pulsed Discharge under Near Atmospheric Pressure
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概要
- 論文の詳細を見る
By using the plasma-enhanced chemical vapor deposition (PE-CVD) under near-atmospheric pressures, we have achieved a high rate growth, 1 nm/s, of polycrystalline Si films on glass substrates without incubation layers for the first time. We have employed a short-pulse based system for a stable operation of discharge at atmospheric pressures without inert gas dilution. This feature enabled us to employ an extremely high dilution of monosilane by hydrogen, which should be the origin of the incubation-free growth of our films, in addition to the basic advantage for the high rate growth inherent in atmospheric reaction systems. The films are mainly consisted of polycrystalline Si with grain size ranging from 5 nm to above 10 nm, as observed by Raman scattering, X-ray diffractions and cross sectional transmission electron microscopy.
- Japan Society of Applied Physicsの論文
- 2005-05-10
著者
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KITAHATA Hiroya
Sekisui Chemical Co., Ltd.
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Suemitsu Maki
Center For Interdisciplinary Research Tohoku University
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Toyoshima Yasutake
Center For Interdisciplinary Research Tohoku University
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Nakajima Setsuo
Sekisui Chemicals Co. Ltd.
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Uehara Tsuyoshi
Sekisui Chemical Co. Ltd.
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Kitahata Hiroya
Sekisui Chemicals Co., Ltd., Wadai, Tsukuba, Ibaraki 300-4292, Japan
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Uehara Tsuyoshi
Sekisui Chemicals Co., Ltd., Wadai, Tsukuba, Ibaraki 300-4292, Japan
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Kitabatake Hirotatsu
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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