Observation of Initial Oxidation on Si(110)-$16\times 2$ surface by Scanning Tunneling Microscopy

概要

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The initial oxidation of a Si(110)-$16\times 2$ clean surface, both at room temperature (RT) and elevated temperatures (635, 660 °C), was investigated by scanning tunneling microscopy (STM). The effects of annealing (300 °C, 15 min) on an RT-oxidized surface were also investigated. On the RT-oxidized surface, a BN site, detected as a bright (B) spot in the filled-state image but as a normal (N) $16\times 2$ adatom in the empty-state image, was observed. After annealing, DD, BD, and BB sites were found to exist in addition to the BN site. Here, DD (BD, BB) is a site that appears dark (bright, bright) in its filled-state image and appears dark (dark, bright) in its empty-state image. The relative population is $\mathrm{DD}>\mathrm{BD}\approx\mathrm{BN}>\mathrm{BB}$. For oxidation at 635 °C, DD, BD, and BN sites were observed. For oxidation at 660 °C, only the BD site was observed. On the basis of these results, an atomistic process during the initial oxidation of the Si(110)-$16\times 2$ surface is discussed.
2007-05-30