Nucleation of Oxides during Dry Oxidation of Si(001)-$2\times 1$ Studied by Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
Morphological development of oxide islands on Si(001)-$2\times 1$ surfaces during the initial stage of dry oxidation has been studied using scanning tunneling microscopy. The oxidation was conducted at a substrate temperature of 560°C under an oxygen pressure of $6.7\times 10^{-5}$ Pa. The initial oxide islands grow one-dimensionally until the number of oxygen atoms within an island reaches four, at which point the growth is converted into a two-dimensional growth mode.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-10-10
著者
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Togashi Hideaki
Center For Interdisciplinary Research Tohoku University
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Suemitsu Maki
Center For Interdisciplinary Research Tohoku University
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Asaoka Hidehito
Neutron Science Research Center Japan Atomic Energy Research Institute
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Yamazaki Tatsuya
Neutron Science Research Center Japan Atomic Energy Research Institute
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Asaoka Hidehito
Neutron Science Research Center, Japan Atomic Energy Research Institute, Tokai, Ibaraki 319-1195, Japan
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