Adsorption and Desorption Kinetics of Organosilanes at Si(001) Surfaces
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概要
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Adsorption and desorption kinetics of organosilanes [dimethylsilane (DMS) and monomethylsilane (MMS)] at Si(001) surfaces have been investigated by using temperature-programmed desorption (TPD), and compared with those of acetylene (C2H2)- and atomic hydrogen (H)-adsorbed Si surfaces. TPD spectra from DMS/Si(001) present $\beta_{1}$ (${\sim}510$°C), $\beta_{1}'$ (${\sim}550$°C), $\gamma$ (${\sim}615$°C) and $\delta$ (${\sim}910$°C) peaks while MMS/Si(001) shows only $\beta_{1}$ (${\sim}510$°C) and $\delta$ (${\sim}870$°C) peaks. C2H2/Si(001) presents $\beta_{1}$ (${\sim}510$°C) and $\gamma$ (${\sim}615$°C) peaks as well but showed no $\beta_{1}'$ and $\delta$ peaks. The $\beta_{1}'$ peak, observed for DMS, is currently understood to be due to hydrogen desorption from the Si–H at a Si–C hetero-dimer. Unlike MMS, the appearance of the bulk-carbon related $\gamma$ peak from the initial DMS adsorption suggests enhanced C incorporation with the use of DMS. The analysis of the hydrogen uptake curve also implies that DMS and MMS have different adsorption kinetics.
- 2003-11-15
著者
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Suemitsu Maki
Center For Interdisciplinary Research Tohoku University
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Nakazawa Hideki
Materials Science And Technology Faculty Of Science And Technology Hirosaki University
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Suemitsu Maki
Center for Interdisciplinary Research, Tohoku University, Aramaki, Sendai 980-8578, Japan
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Senthil Karuppanan
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan
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Nakazawa Hideki
Materials Science and Technology, Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8560, Japan
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