Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source

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We have deposited Si-incorporated diamond-like carbon (DLC) films by radio-frequency plasma-enhanced chemical vapor deposition using methane, argon, and monomethylsilane (MMS; CH3SiH3) as a silicon source, and have investigated the structural and mechanical properties of the films. The deposition rate and Si atomic fraction [$\text{Si}/(\text{Si}+\text{C})$] in the DLC films increased with increasing MMS flow ratio. The Si fraction was approximately 13% at a MMS flow ratio [$\text{MMS}/(\text{MMS}+\text{CH$_{4}$})$] of 3%, showing that the deposition using a combination of CH4 and MMS produces films with high Si content compared with those deposited using conventional C and Si sources. The Si fraction was also found to increase with a decrease in Ar flow rate under a constant MMS flow ratio. Many particles composed mainly of Si, whose size was 0.3–1 μm in diameter, were observed on the surface when deposition was carried out at MMS flow ratios of 15 and 30%. Compressive internal stress in the films decreased with the MMS flow ratio and/or with the Ar flow rate. The decrease in internal stress is probably due to the relaxation of a three-dimensional rigid network by the formation of Si–C and Si–H bonds in the films as well as Ar+ ion bombardment.
2008-11-25