An Analysis of Program and Erase Mechanisms for Floating Channel Type Surrounding Gate Transistor Flash Memory Cells(Semiconductor Materials and Devices)

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概要

• 論文の詳細を見る

• This paper analyzes program and erase mechanisms for Floating Channel type Surrounding Gate Transistor (FC-SGT) Flash memory cells for the first time. In FC-SGT Flash memory cell, control gate, floating gate, drain and source is arranged vertically on the substrate. The body region is isolated from the substrate by the bottom source region. The cell is programmed by applying a high positive voltage to the control gate electrode with drain and source electrodes grounded. Erasing is performed by applying a high positive voltage to the drain and source electrodes with the control gate electrode grounded. The physical models for program and erase operations in FC-SGT Flash memory cell are developed. Program and erase operations based on the developed physical models are simulated by utilizing a device simulator. Program and erase characteristics obtained from the device simulation agree well with the results of analytical models. The FC-SGT Flash memory cell can realize program and erase operation with a floating body structure.

• 2004-09-01

著者

• SAKURABA Hiroshi

  Research Institute of Electrical Communication, Tohoku University

• Endoh T

  Tohoku Univ. Sendai‐shi Jpn

• Endoh T

  Tohoku Univ. Sendai Jpn

• Endoh Tetsuo

  Research Institute Of Electrical Communication Tohoku University

• Masuoka F

  Tohoku Univ. Sendai Jpn

• Masuoka Fujio

  The Reserch Institute Of Electrical Communication Tohoku University

• ENDOH Tetsuo

  the Reserch Institute of Electrical Communication, Tohoku University

• Masuoka F

  Research Institute Of Electrical Communication Tohoku University

• HIOKI Masakazu

  Electroinfomatics Group, Nanoelectronics Research Institute, National Institute of Advenced Industri

• SAKURABA Hiroshi

  the Research Institute of Electrical Communication, Tohoku University

• Sakuraba Hiroshi

  Research Institute Of Electrical Communication Tohoku University

• Endoh T

  Research Institute Of Electrical Communication Tohoku University

• Hioki Masakazu

  Electroinfomatics Group Nanoelectronics Research Institute National Institute Of Advenced Industrial

• ENDOH Tetsuo

  the Research Institute of Electrical Communication, Tohoku University

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