Fabrication of Nanometer Silicon Pillars for Buried-Gate-Type Surrounding Gate Transistor by Silicon Quasi-Isotropic Etching
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概要
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A fabrication process for nanometer silicon pillars by silicon quasi-isotropic etching for a buried-gate-type surrounding gate transistor (BG-SGT) is proposed. In a normal SGT structure, the diameter of a channel region is defined using a silicon pillar whose diameter is equal to a minimum feature size. However, in a BG-SGT structure, the channel region is located within a buried region and hence is defined using a silicon pillar whose diameter is smaller than the minimum feature size. By electron beam (EB) lithography with a minimum feature size of 65 nm, we were able to fabricate successfully an entire silicon pillar with a buried region whose diameter was about 40 nm. In addition, the dependence of the etching rate of the silicon sidewall on the crystallographic orientation was investigated.
- 2006-01-15
著者
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Masuoka Fujio
Research Institute Of Electrical Communication Tohoku University
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Sakuraba Hiroshi
Research Institute Of Electrical Communication Tohoku University
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Hidaka Takeshi
Research Institute Of Electrical Communication Tohoku University
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Nakamura Hiroki
Research Institute Of Electrical Communication Tohoku University
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Izumida Takashi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Ohba Takuya
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Kitagawa Takeyuki
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Amikawa Hiroyuki
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Ohtsu Syuuhei
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hidaka Takeshi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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NAKAMURA HIROKI
Research Division, Hitachi Plant Engineering & Construction Corporation
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Nakamura Hiroki
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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