The Analysis of the Stacked-Surrounding Gate Transistor(S-SGT)DRAM for the High Speed and Low Voltage Operation
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概要
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This paper describes the analysis of the Stacked-Surrounding Gate Transistor(S-SGT)DRAM for the high speed and low voltage operation.The S-SGT DRAM is based on the new three dimensional(3D)-building memory array technology.In terms of the bit-line's signal voltage for read operation, it is found that the signal voltage of the S-SGT DRAM is larger than that of the conventional planar DRAM, the NAND-structured DRAM, and the SGT DRAM.The signal voltage of the S-SGT DRAM was found to depend on the pillar radius, the distance between the bit-line and the substrate, and the number of cells connected to one bit-line in comparison with the above three kinds of conventionl DRAMs.Especially, with reducing the pillar radius(R), the signal voltage of the S-SGT DRAM becomes larger.In the concrete, in case that R is 0.25μm, the signal voltage of the S-SGT DRAM is about 160%, 160% and 120% in comparison with the planar DRAM, the SGT DRAM and the NAND-structured DRAM, respectively.Therefore, the S-SGT DRAM can realize larger S/N ratio.This advantage can realize the high speed and low voltage operation.Moreover, in case that the signal voltage is constant(0.15V), the maximum number of cells connected to one bit-line for the S-SGT DRAM is about 2 times in comparison with the planar DRAM.This advantage makes it possible to reduce the number of both sense amplifiers and bit-lines.This is very suitable for reducing the total chip size of the S-SGT DRAM.Above all, it was found that the S-SGT DRAM is one of candidates for the high speed and low voltage operation DRAM in the future.
- 1998-09-25
著者
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SAKURABA Hiroshi
Research Institute of Electrical Communication, Tohoku University
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Endoh T
Tohoku Univ. Sendai‐shi Jpn
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Endoh T
Tohoku Univ. Sendai Jpn
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Endoh Tetsuo
Research Institute Of Electrical Communication Tohoku University
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Masuoka F
Tohoku Univ. Sendai Jpn
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Masuoka Fujio
The Reserch Institute Of Electrical Communication Tohoku University
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Masuoka F
Research Institute Of Electrical Communication Tohoku University
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ENDOH Tetsuo
The authors are with the Research Institute of Electrical Communication, Tohoku University
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SHINMEI Katsuhisa
The authors are with the Research Institute of Electrical Communication, Tohoku University
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SAKURABA Hiroshi
The authors are with the Research Institute of Electrical Communication, Tohoku University
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MASUOKA Fujio
The authors are with the Research Institute of Electrical Communication, Tohoku University
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Sakuraba Hiroshi
Research Institute Of Electrical Communication Tohoku University
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Endoh T
Research Institute Of Electrical Communication Tohoku University
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Shinmei Katsuhisa
The Authors Are With The Research Institute Of Electrical Communication Tohoku University
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