Endoh T | Research Institute Of Electrical Communication Tohoku University
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概要
関連著者
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Endoh T
Tohoku Univ. Sendai‐shi Jpn
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Endoh T
Tohoku Univ. Sendai Jpn
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Endoh T
Research Institute Of Electrical Communication Tohoku University
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Masuoka F
Tohoku Univ. Sendai Jpn
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Masuoka Fujio
The Reserch Institute Of Electrical Communication Tohoku University
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Masuoka F
Research Institute Of Electrical Communication Tohoku University
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Endoh Tetsuo
Research Institute Of Electrical Communication Tohoku University
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MASUOKA Fujio
Research Institute of Electrical Communication, Tohoku University
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Masuoka Fujio
Research Institute Of Electrical Communication Tohoku University
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SAKURABA Hiroshi
Research Institute of Electrical Communication, Tohoku University
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Sakuraba Hiroshi
Research Institute Of Electrical Communication Tohoku University
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Shirota Riichiro
Microelectronics Engineering Lab. Toshiba
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Shirota Riichiro
Toshiba Research And Development Center Ulsi Research Laboratories
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Iizuka Hirohisa
Toyota Central Research & Development Labs. Inc.
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Hemink Gertjan
Ulsi Research Center Toshiba Corporation
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ENDOH Tetsuo
the Reserch Institute of Electrical Communication, Tohoku University
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NAKAMURA Tairiku
Research Institute of Electrical Communication, Tohoku University
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IWAI Makoto
Research Institute of Electrical Communication Tohoku University
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IIZUKA Hirohisa
Microelectronics Engineering Lab. Toshiba
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IIZUKA Hirohisa
ULSI Research Laboratories, Toshiba R&D Center
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ENDOH Tetsuo
ULSI Research Laboratories, Toshiba R&D Center
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ARITOME Seiichi
ULSI Research Laboratories, Toshiba R&D Center
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SHIROTA Riichiro
ULSI Research Laboratories, Toshiba R&D Center
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NAKAMURA Tomonori
Tohoku University
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Nakamura Tairiku
Research Institute Of Electrical Communication Tohoku University
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Nakamura Kazutoshi
Division Of Social And Environmental Medicine Department Of Community Preventive Medicine Niigata Un
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Nakamura Kazutoshi
The Reserch Institute Of Electrical Communication Tohoku University
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Aritome Seiichi
Ulsi Research Laboratories Toshiba R&d Center
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Nakamura T
Department Of Bioengineering And Robotics Tohoku University
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ENDOH Tetsuo
the Research Institute of Electrical Communication, Tohoku University
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Yamamoto Yasue
System Lsi Technology Development Center Corporate System Lsi Development Division Semiconductor Com
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Yamamoto Yasue
Research Institute Of Electrical Communication Tohoku University
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Sakui K
Toshiba Corp. Yokohama
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NAKAMURA Kazutoshi
the Reserch Institute of Electrical Communication, Tohoku University
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NAKAMURA Kazutoshi
Research Institute of Electrical Communication, Tohoku University
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NISHI Ryohsuke
Research Institute of Electrical Communication Tohoku University
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SHIROTA Riichirou
Microelectronics Engineering Lab. Toshiba
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SHIMIZU Kazuyosi
Microelectronics Engineering Lab. Toshiba
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MASUOKA Fujio
ULSI Research Laboratories, Toshiba R&D Center
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HATAKEYAMA Ikuo
ULSI Research Center, TOSHIBA Corporation
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YAMAGUCHI Tetsuya
ULSI Research Center, TOSHIBA Corporation
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SHUTO Susumu
ULSI Research Center, TOSHIBA Corporation
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MARUYAMA Tooru
ULSI Research Center, TOSHIBA Corporation
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WATANABE Hiroshi
ULSI Research Center, TOSHIBA Corporation
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SAKUI Koji
ULSI Research Center, TOSHIBA Corporation
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TANAKA Tomoharu
ULSI Research Center, TOSHIBA Corporation
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MOMODOMI Masaki
ULSI Research Center, TOSHIBA Corporation
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HIOKI Masakazu
Electroinfomatics Group, Nanoelectronics Research Institute, National Institute of Advenced Industri
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SAKURABA Hiroshi
the Research Institute of Electrical Communication, Tohoku University
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ENDOH Tetsuo
The authors are with the Research Institute of Electrical Communication, Tohoku University
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SHINMEI Katsuhisa
The authors are with the Research Institute of Electrical Communication, Tohoku University
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SAKURABA Hiroshi
The authors are with the Research Institute of Electrical Communication, Tohoku University
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MASUOKA Fujio
The authors are with the Research Institute of Electrical Communication, Tohoku University
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Shuto Susumu
Ulsi Research Center Toshiba Corporation
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Maruyama Tooru
Ulsi Research Center Toshiba Corporation
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Hioki Masakazu
Electroinfomatics Group Nanoelectronics Research Institute National Institute Of Advenced Industrial
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Momodomi Masaki
Ulsi Research Center Toshiba Corporation
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Tanaka Tomoharu
Ulsi Research Center Toshiba Corporation
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HEMINK Gertjan
Toshiba Research and Development Center, ULSI Research Laboratories
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ENDOH Tetsuo
Toshiba Research and Development Center, ULSI Research Laboratories
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Hatakeyama Ikuo
Ulsi Research Center Toshiba Corporation
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Shinmei Katsuhisa
The Authors Are With The Research Institute Of Electrical Communication Tohoku University
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Yamaguchi Tetsuya
Ulsi Research Center Toshiba Corporation
著作論文
- A High Performance Voltage Down Converter (VDC) Using New Flexible Control Technology of Driving Current
- Evaluation of the Voltage Down Converter(VDC)with Low Ratio of consuming Current to Load Current in DC/AC Operation Mode
- High-Performance Buried-Gate Surrounding Gate Transistor for Future Three-Dimensional Devices
- An Analysis of Program and Erase Mechanisms for Floating Channel Type Surrounding Gate Transistor Flash Memory Cells(Semiconductor Materials and Devices)
- Buried Gate Type SGT Flash Memory(The IEICE Transactions (published in Japanese) Vol. J86-C, No.5 (Electronics))
- The Analysis of the Stacked-Surrounding Gate Transistor(S-SGT)DRAM for the High Speed and Low Voltage Operation
- New Write/Erase Operation Technology for Flash EEPROM Cells to Improve the Read Disturb Characteristics
- New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films
- An Analytic Steady-State Current-Voltage Characteristics of Short Channel Fully-Depleted Surrounding Gate Transistor (FD-SGT) (Special Issue on New Concept Device and Novel Architecture LSIs)
- An Accurate Model of Fully-Depleted Surrounding Gate Transistor (FD-SGT) (Special Issue on New Concept Device and Novel Architecture LSIs)
- A Novel Programming Method Using a Reverse Polarity Pulse in Flash EEPROMs (Special Issue on ULSI Memory Technology)
- An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)
- Modeling of the Hole Current Caused by Fowler-Nordheim Tunneling through Thin Oxides