A Novel Programming Method Using a Reverse Polarity Pulse in Flash EEPROMs (Special Issue on ULSI Memory Technology)
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概要
- 論文の詳細を見る
The data retention characteristics for Flash EEPROM degrade after a large number of write and erase cycles due to the increase of the tunnel oxide leakage current. This paper proposes a new write/erase method which uses a reverse polarity pulse after each erase pulse. By using this method, the leakage current can be suppressed. As a result, the read disturb time after 1O^5 cycles write/erase operation is more than 1O times longer in comparison with that of the conventional method. Moreover, using this method, the endurance cycle dependence of the threshold voltage after write and erase operation is also drastically improved.
- 1996-06-25
著者
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Endoh T
Tohoku Univ. Sendai‐shi Jpn
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Endoh T
Tohoku Univ. Sendai Jpn
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Masuoka F
Tohoku Univ. Sendai Jpn
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Masuoka Fujio
The Reserch Institute Of Electrical Communication Tohoku University
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Masuoka F
Research Institute Of Electrical Communication Tohoku University
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IIZUKA Hirohisa
ULSI Research Laboratories, Toshiba R&D Center
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ENDOH Tetsuo
ULSI Research Laboratories, Toshiba R&D Center
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ARITOME Seiichi
ULSI Research Laboratories, Toshiba R&D Center
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SHIROTA Riichiro
ULSI Research Laboratories, Toshiba R&D Center
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MASUOKA Fujio
ULSI Research Laboratories, Toshiba R&D Center
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Shirota Riichiro
Microelectronics Engineering Lab. Toshiba
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Aritome Seiichi
Ulsi Research Laboratories Toshiba R&d Center
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Shirota Riichiro
Toshiba Research And Development Center Ulsi Research Laboratories
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Endoh T
Research Institute Of Electrical Communication Tohoku University
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Iizuka Hirohisa
Toyota Central Research & Development Labs. Inc.
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