Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling (Special Section on High Speed and High Density Multi Functional LSI Memories)
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概要
- 論文の詳細を見る
The data retention characteristics of a Flash memory cell with a self-aligned double poly-Si stacked structure have been drastically improved by applying a bi-polarity write and erase technology which uses uniform Fowler-Nordheim tunneling over the whole channel area both during write and erase. It is clarified experimentally that the detrapping of electrons from the gate oxide to the substrate results in an extended retention time. A bi-polarity write and erase technology also guarantees a wide cell threshold voltage window even after 10^6 write/erase cycles. This technology results in a highly reliable EEPROM with an extended data retention time.
- 1994-08-25
著者
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Sakui K
Toshiba Corp. Yokohama
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Sakui Koji
The Ulsi Research Center Toshiba Corporation
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Masuoka F
Tohoku Univ. Sendai Jpn
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Masuoka Fujio
The Reserch Institute Of Electrical Communication Tohoku University
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Masuoka Fujio
The Ulsi Research Center Toshiba Corporation
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Masuoka F
Research Institute Of Electrical Communication Tohoku University
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Aritome Seiichi
the ULSI Research Center, TOSHIBA CORPORATION
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Shirota Riichiro
the ULSI Research Center, TOSHIBA CORPORATION
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Shirota Riichiro
Microelectronics Engineering Lab. Toshiba
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Aritome Seiichi
Ulsi Research Laboratories Toshiba R&d Center
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Shirota Riichiro
Toshiba Research And Development Center Ulsi Research Laboratories
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