Hemink Gertjan | Ulsi Research Center Toshiba Corporation

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概要

• 同名の論文著者
• Ulsi Research Center Toshiba Corporationの論文著者

関連著者

• Endoh T

  Tohoku Univ. Sendai‐shi Jpn

• Endoh T

  Tohoku Univ. Sendai Jpn

• Hemink Gertjan

  Ulsi Research Center Toshiba Corporation

• Shirota Riichiro

  Microelectronics Engineering Lab. Toshiba

• Shirota Riichiro

  Toshiba Research And Development Center Ulsi Research Laboratories

• Endoh T

  Research Institute Of Electrical Communication Tohoku University

• Sakui K

  Toshiba Corp. Yokohama

• IIZUKA Hirohisa

  ULSI Research Laboratories, Toshiba R&D Center

• ENDOH Tetsuo

  ULSI Research Laboratories, Toshiba R&D Center

• ARITOME Seiichi

  ULSI Research Laboratories, Toshiba R&D Center

• SHIROTA Riichiro

  ULSI Research Laboratories, Toshiba R&D Center

• HATAKEYAMA Ikuo

  ULSI Research Center, TOSHIBA Corporation

• YAMAGUCHI Tetsuya

  ULSI Research Center, TOSHIBA Corporation

• SHUTO Susumu

  ULSI Research Center, TOSHIBA Corporation

• MARUYAMA Tooru

  ULSI Research Center, TOSHIBA Corporation

• WATANABE Hiroshi

  ULSI Research Center, TOSHIBA Corporation

• SAKUI Koji

  ULSI Research Center, TOSHIBA Corporation

• TANAKA Tomoharu

  ULSI Research Center, TOSHIBA Corporation

• MOMODOMI Masaki

  ULSI Research Center, TOSHIBA Corporation

• Aritome Seiichi

  Ulsi Research Laboratories Toshiba R&d Center

• Shuto Susumu

  Ulsi Research Center Toshiba Corporation

• Maruyama Tooru

  Ulsi Research Center Toshiba Corporation

• Iizuka Hirohisa

  Toyota Central Research & Development Labs. Inc.

• Momodomi Masaki

  Ulsi Research Center Toshiba Corporation

• Tanaka Tomoharu

  Ulsi Research Center Toshiba Corporation

• HEMINK Gertjan

  Toshiba Research and Development Center, ULSI Research Laboratories

• ENDOH Tetsuo

  Toshiba Research and Development Center, ULSI Research Laboratories

• Hatakeyama Ikuo

  Ulsi Research Center Toshiba Corporation

• Yamaguchi Tetsuya

  Ulsi Research Center Toshiba Corporation

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著作論文

• An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)
• Modeling of the Hole Current Caused by Fowler-Nordheim Tunneling through Thin Oxides

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