Yamamoto Yasue | Research Institute Of Electrical Communication Tohoku University

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• Yamamoto Yasueの詳細を見る
• 同名の論文著者
• Research Institute Of Electrical Communication Tohoku Universityの論文著者

関連著者

• Yamamoto Yasue

  System Lsi Technology Development Center Corporate System Lsi Development Division Semiconductor Com

• Yamamoto Yasue

  Research Institute Of Electrical Communication Tohoku University

• SAKURABA Hiroshi

  Research Institute of Electrical Communication, Tohoku University

• MASUOKA Fujio

  Research Institute of Electrical Communication, Tohoku University

• Masuoka F

  Tohoku Univ. Sendai Jpn

• Masuoka Fujio

  Research Institute Of Electrical Communication Tohoku University

• Masuoka Fujio

  The Reserch Institute Of Electrical Communication Tohoku University

• Masuoka F

  Research Institute Of Electrical Communication Tohoku University

• Sakuraba Hiroshi

  Research Institute Of Electrical Communication Tohoku University

• Yamamoto Yasue

  System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush

• HIDAKA Takeshi

  Research Institute of Electrical Communication, Tohoku University

• NAKAMURA Hiroki

  Research Institute of Electrical Communication, Tohoku University

• Endoh T

  Tohoku Univ. Sendai‐shi Jpn

• Endoh T

  Tohoku Univ. Sendai Jpn

• Endoh Tetsuo

  Research Institute Of Electrical Communication Tohoku University

• IWAI Makoto

  Research Institute of Electrical Communication Tohoku University

• NISHI Ryohsuke

  Research Institute of Electrical Communication Tohoku University

• Endoh T

  Research Institute Of Electrical Communication Tohoku University

• Hidaka Takeshi

  Research Institute Of Electrical Communication Tohoku University

• Nakamura Hiroki

  Research Institute Of Electrical Communication Tohoku University

• NAKAMURA HIROKI

  Research Division, Hitachi Plant Engineering & Construction Corporation

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著作論文

• Decananometer Surrounding Gate Transistor (SGT) Scalability by Using an Intrinsically-Doped Body and Gate Work Function Engineering(Semiconductor Materials and Devices)
• High-Performance Buried-Gate Surrounding Gate Transistor for Future Three-Dimensional Devices

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