Sakuraba Hiroshi | Research Institute Of Electrical Communication Tohoku University
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概要
- Sakuraba Hiroshiの詳細を見る
- 同名の論文著者
- Research Institute Of Electrical Communication Tohoku Universityの論文著者
関連著者
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Sakuraba Hiroshi
Research Institute Of Electrical Communication Tohoku University
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SAKURABA Hiroshi
Research Institute of Electrical Communication, Tohoku University
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Endoh Tetsuo
Research Institute Of Electrical Communication Tohoku University
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Masuoka F
Tohoku Univ. Sendai Jpn
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Masuoka Fujio
Research Institute Of Electrical Communication Tohoku University
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Masuoka Fujio
The Reserch Institute Of Electrical Communication Tohoku University
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Masuoka F
Research Institute Of Electrical Communication Tohoku University
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Endoh T
Tohoku Univ. Sendai‐shi Jpn
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Endoh T
Tohoku Univ. Sendai Jpn
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Endoh T
Research Institute Of Electrical Communication Tohoku University
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MASUOKA Fujio
Research Institute of Electrical Communication, Tohoku University
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Yamamoto Yasue
System Lsi Technology Development Center Corporate System Lsi Development Division Semiconductor Com
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Yamamoto Yasue
Research Institute Of Electrical Communication Tohoku University
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IWAI Makoto
Research Institute of Electrical Communication Tohoku University
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Hidaka Takeshi
Research Institute Of Electrical Communication Tohoku University
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Nakamura Hiroki
Research Institute Of Electrical Communication Tohoku University
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NAKAMURA HIROKI
Research Division, Hitachi Plant Engineering & Construction Corporation
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Yamamoto Yasue
System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush
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HIDAKA Takeshi
Research Institute of Electrical Communication, Tohoku University
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NAKAMURA Hiroki
Research Institute of Electrical Communication, Tohoku University
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ENDOH Tetsuo
the Reserch Institute of Electrical Communication, Tohoku University
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NISHI Ryohsuke
Research Institute of Electrical Communication Tohoku University
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HIOKI Masakazu
Electroinfomatics Group, Nanoelectronics Research Institute, National Institute of Advenced Industri
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SAKURABA Hiroshi
the Research Institute of Electrical Communication, Tohoku University
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KINOSHITA Kazushi
Advanced Technology Development Center, Sharp Corporation
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YOKOYAMA Takashi
Research Institute of Electrical Communication, Tohoku University
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ENDOH Tetsuo
The authors are with the Research Institute of Electrical Communication, Tohoku University
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SHINMEI Katsuhisa
The authors are with the Research Institute of Electrical Communication, Tohoku University
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SAKURABA Hiroshi
The authors are with the Research Institute of Electrical Communication, Tohoku University
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MASUOKA Fujio
The authors are with the Research Institute of Electrical Communication, Tohoku University
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Horii Shinji
Research Institute Of Electrical Communication Tohoku University
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Hioki Masakazu
Electroinfomatics Group Nanoelectronics Research Institute National Institute Of Advenced Industrial
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Tanigami Takuji
Advanced Technology Development Center Sharp Corporation
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Sakiyama Keizou
Advanced Technology Development Center Sharp Corporation
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Saitoh Masahiro
Advanced Technology Development Center Sharp Corporation
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Shinmei Katsuhisa
The Authors Are With The Research Institute Of Electrical Communication Tohoku University
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Izumida Takashi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Masuoka Fujio
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Yokoyama Takashi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Ohba Takuya
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Sakuraba Hiroshi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Kitagawa Takeyuki
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Amikawa Hiroyuki
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Ohtsu Syuuhei
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Endoh Tetsuo
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hidaka Takeshi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Saitoh Masahiro
Advanced Technology Development Center, Sharp Corporation, 1 Asahi, Daimon-cho, Fukuyama, Hiroshima 721-8522, Japan
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Kinoshita Kazushi
Advanced Technology Development Center, Sharp Corporation, 1 Asahi, Daimon-cho, Fukuyama, Hiroshima 721-8522, Japan
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Nakamura Hiroki
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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ENDOH Tetsuo
the Research Institute of Electrical Communication, Tohoku University
著作論文
- Decananometer Surrounding Gate Transistor (SGT) Scalability by Using an Intrinsically-Doped Body and Gate Work Function Engineering(Semiconductor Materials and Devices)
- High-Performance Buried-Gate Surrounding Gate Transistor for Future Three-Dimensional Devices
- An Analysis of Program and Erase Mechanisms for Floating Channel Type Surrounding Gate Transistor Flash Memory Cells(Semiconductor Materials and Devices)
- Buried Gate Type SGT Flash Memory(The IEICE Transactions (published in Japanese) Vol. J86-C, No.5 (Electronics))
- The Analysis of the Stacked-Surrounding Gate Transistor(S-SGT)DRAM for the High Speed and Low Voltage Operation
- Fabrication of Nanometer Silicon Pillars for Buried-Gate-Type Surrounding Gate Transistor by Silicon Quasi-Isotropic Etching
- New Three-Dimensional High-Density Stacked-Surrounding Gate Transistor (S-SGT) Flash Memory Architecture Using Self-Aligned Interconnection Fabrication Technology without Photolithography Process for Tera-Bits and Beyond