Endoh Tetsuo | Research Institute Of Electrical Communication Tohoku University
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概要
関連著者
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Endoh Tetsuo
Research Institute Of Electrical Communication Tohoku University
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Masuoka F
Tohoku Univ. Sendai Jpn
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Endoh T
Tohoku Univ. Sendai‐shi Jpn
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Endoh T
Tohoku Univ. Sendai Jpn
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Masuoka Fujio
Research Institute Of Electrical Communication Tohoku University
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Masuoka Fujio
The Reserch Institute Of Electrical Communication Tohoku University
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Masuoka F
Research Institute Of Electrical Communication Tohoku University
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Endoh T
Research Institute Of Electrical Communication Tohoku University
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MASUOKA Fujio
Research Institute of Electrical Communication, Tohoku University
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SAKURABA Hiroshi
Research Institute of Electrical Communication, Tohoku University
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Sakuraba Hiroshi
Research Institute Of Electrical Communication Tohoku University
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SUEMITSU Maki
Center for Interdisciplinary Research, Tohoku University
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Suemitsu Maki
Tohoku Univ. Sendai Jpn
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Suemitsu Maki
Center For Interdisciplinary Research Tohoku University
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Narita Yuzuru
Center For Interdisciplinary Research Tohoku University
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NAKAMURA Tairiku
Research Institute of Electrical Communication, Tohoku University
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IWAI Makoto
Research Institute of Electrical Communication Tohoku University
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IIZUKA Hirohisa
Microelectronics Engineering Lab. Toshiba
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NAKAMURA Tomonori
Tohoku University
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KINOSHITA Kazushi
Advanced Technology Development Center, Sharp Corporation
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YOKOYAMA Takashi
Research Institute of Electrical Communication, Tohoku University
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Nakamura Tairiku
Research Institute Of Electrical Communication Tohoku University
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Nakamura T
Department Of Bioengineering And Robotics Tohoku University
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Iizuka Hirohisa
Toyota Central Research & Development Labs. Inc.
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ENDOH Tetsuo
Research Institute of Electrical Communication, Tohoku University
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Endoh Tetsuo
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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KONNO Atsushi
Center for Interdisciplinary Research, Tohoku Univ.
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Yamamoto Yasue
System Lsi Technology Development Center Corporate System Lsi Development Division Semiconductor Com
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Yamamoto Yasue
Research Institute Of Electrical Communication Tohoku University
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Shiraishi Kenji
Graduate School of Pure and Applied Science, University of Tsukuba
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YASUI Kanji
Department of Electronics, Faculty of Engineering, Nagaoka University of Technology
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ENDOH Tetsuo
the Reserch Institute of Electrical Communication, Tohoku University
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NAKAMURA Kazutoshi
Research Institute of Electrical Communication, Tohoku University
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ITOH Takashi
Center for Information Science, Nippon Medical School
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NAKAZAWA Hideki
Department of Materials Science and Technology, Faculty of Science and Technology, Hirosaki Universi
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SAKAI Masashi
Center for Interdisciplinary Research, Tohoku University
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MURATA Takeshi
Center for Interdisciplinary Research, Tohoku University
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Konno Atsushi
Tohoku Univ. Sendai Jpn
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Konno Atsushi
Center For Interdisciplinary Research Tohoku University
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Enta Yoshiharu
Faculty Of Science And Technology Hirosaki University
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NISHI Ryohsuke
Research Institute of Electrical Communication Tohoku University
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Hirose Kazuyuki
Institute Of Space And Astronautical Science Jaxa
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Hirose Kazuyuki
Institute Of Space And Astronautical Science
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SHIROTA Riichirou
Microelectronics Engineering Lab. Toshiba
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SHIMIZU Kazuyosi
Microelectronics Engineering Lab. Toshiba
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HIOKI Masakazu
Electroinfomatics Group, Nanoelectronics Research Institute, National Institute of Advenced Industri
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SAKURABA Hiroshi
the Research Institute of Electrical Communication, Tohoku University
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TANIGAMI Takuji
Advanced Technology Development Center, Sharp Corporation
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HORII Shinji
Research Institute of Electrical Communication, Tohoku University
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SAITOH Masahiro
Advanced Technology Development Center, Sharp Corporation
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SAKIYAMA Keizou
Advanced Technology Development Center, Sharp Corporation
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ENDOH Tetsuo
The authors are with the Research Institute of Electrical Communication, Tohoku University
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SHINMEI Katsuhisa
The authors are with the Research Institute of Electrical Communication, Tohoku University
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SAKURABA Hiroshi
The authors are with the Research Institute of Electrical Communication, Tohoku University
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MASUOKA Fujio
The authors are with the Research Institute of Electrical Communication, Tohoku University
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Shirota Riichiro
Microelectronics Engineering Lab. Toshiba
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Nakamura Kazutoshi
Division Of Social And Environmental Medicine Department Of Community Preventive Medicine Niigata Un
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Nakamura Kazutoshi
The Reserch Institute Of Electrical Communication Tohoku University
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Shirota Riichiro
Toshiba Research And Development Center Ulsi Research Laboratories
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Horii Shinji
Research Institute Of Electrical Communication Tohoku University
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Sakai Masashi
Center For Interdisciplinary Research Tohoku University
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Hioki Masakazu
Electroinfomatics Group Nanoelectronics Research Institute National Institute Of Advenced Industrial
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Nakazawa Hideki
Faculty Of Science And Technology Hirosaki University
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Tanigami Takuji
Advanced Technology Development Center Sharp Corporation
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Sakiyama Keizou
Advanced Technology Development Center Sharp Corporation
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Kimura Y
Research Institute Of Electrical Communication Tohoku University
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Saitoh Masahiro
Advanced Technology Development Center Sharp Corporation
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Kimura Yasutaka
Research Institute Of Electrical Communication Tohoku University
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Lenski Markus
Research Institute Of Electrical Communication Tohoku University
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Abe Toshimi
Tohoku Institute Of Technology
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Yasui Kanji
Nagaoka Univ. Technol. Nagaoka‐shi Jpn
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Shinmei Katsuhisa
The Authors Are With The Research Institute Of Electrical Communication Tohoku University
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Itoh Takashi
Center For Information And Sciences Nippon Medical School
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Shiraishi Kenji
Graduate School Of Pure & Applied Physics University Of Tsukuba
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Kinoshita Takeshi
Faculty Of Engineering Yamaguchi University
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Momma Yuto
Research Institute Of Electrical Communication Tohoku University
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Murata Takeshi
Center For Interdisciplinary Research Tohoku University
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Tanaka Kousuke
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Suemitsu Maki
Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Asai Yuhki
Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Mashita Masao
Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Narita Yuzuru
Kyusyu Institute of Technology, Kitakyusyu 804-8550, Japan
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Masuoka Fujio
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Yokoyama Takashi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Sakuraba Hiroshi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Narita Yuzuru
Kyusyu Institute of Technology, Kitakyushu 804-8550, Japan
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Saitoh Masahiro
Advanced Technology Development Center, Sharp Corporation, 1 Asahi, Daimon-cho, Fukuyama, Hiroshima 721-8522, Japan
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Enta Yoshiharu
Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Kinoshita Kazushi
Advanced Technology Development Center, Sharp Corporation, 1 Asahi, Daimon-cho, Fukuyama, Hiroshima 721-8522, Japan
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Konno Atsushi
Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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ENDOH Tetsuo
the Research Institute of Electrical Communication, Tohoku University
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Mashita Masao
Faculty of Science and Technology, Hirosaki University
著作論文
- Evaluation of the Voltage Down Converter(VDC)with Low Ratio of consuming Current to Load Current in DC/AC Operation Mode
- Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane
- Ge-Dot Formation on Si(111)-7 × 7 Surface with C Predeposition Using Monomethylsilane
- High-Performance Buried-Gate Surrounding Gate Transistor for Future Three-Dimensional Devices
- An Analysis of Program and Erase Mechanisms for Floating Channel Type Surrounding Gate Transistor Flash Memory Cells(Semiconductor Materials and Devices)
- New Three-Dimensional High-Density Stacked-Surrounding Gate Transistor (S-SGT) Flash Memory Architecture Using Self-Aligned Interconnection Fabrication Technology without Photolithography Process for Tera-Bits and Beyond
- Buried Gate Type SGT Flash Memory(The IEICE Transactions (published in Japanese) Vol. J86-C, No.5 (Electronics))
- Influence of Silicon Wafer Loading Ambient on Chemical Composition and Thickness Uniformity of Sub-5-nm-Thick Oxide Films : Surfaces, Interfaces, and Films
- The Analysis of the Stacked-Surrounding Gate Transistor(S-SGT)DRAM for the High Speed and Low Voltage Operation
- New Write/Erase Operation Technology for Flash EEPROM Cells to Improve the Read Disturb Characteristics
- New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films
- An Analytic Steady-State Current-Voltage Characteristics of Short Channel Fully-Depleted Surrounding Gate Transistor (FD-SGT) (Special Issue on New Concept Device and Novel Architecture LSIs)
- An Accurate Model of Fully-Depleted Surrounding Gate Transistor (FD-SGT) (Special Issue on New Concept Device and Novel Architecture LSIs)
- Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Study of 30-nm Double-Gate MOSFET with Halo Implantation Technology Using a Two-Dimensional Device Simulator(Novel MOSFET Structures,Fundamentals and Applications of Advanced Semiconductor Devices)
- Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source
- Study of Self-Heating in Si Nano Structure for Floating Body-Surround Gate Transistor with High-$k$ Dielectric Films
- New Three-Dimensional High-Density Stacked-Surrounding Gate Transistor (S-SGT) Flash Memory Architecture Using Self-Aligned Interconnection Fabrication Technology without Photolithography Process for Tera-Bits and Beyond