Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films(Ultra-Thin Gate Insulators,<Special Section>Fundamentals and Applications of Advanced Semiconductor Devices)
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概要
- 論文の詳細を見る
The physical origin of stress-induced leakage currents (SILC) in ultra-thin SiO_2 films is described. Assuming a two-step trapassisted tunneling process accompanied with an energy relaxation process of trapped electrons, conditions of trap sites which are origin of SICL are quantitatively found. It is proposed that the trap site location and the trap state energy can be explained by a mean-free-path of hole in SiO_2 films and an atomic structure of the trap site by the O vacancy model.
- 社団法人電子情報通信学会の論文
- 2007-05-01
著者
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Shiraishi Kenji
Graduate School of Pure and Applied Science, University of Tsukuba
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Endoh Tetsuo
Research Institute Of Electrical Communication Tohoku University
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Hirose Kazuyuki
Institute Of Space And Astronautical Science Jaxa
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Hirose Kazuyuki
Institute Of Space And Astronautical Science
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Shiraishi Kenji
Graduate School Of Pure & Applied Physics University Of Tsukuba
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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ENDOH Tetsuo
Research Institute of Electrical Communication, Tohoku University
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